Ex parte JOHN L. WHITE - Page 6




          Appeal No. 94-3737                                                          
          Application 07/796,932                                                      


               We now turn to the rejection of the appealed claims under              
          35 U.S.C. § 112, first and second paragraphs.  According to the             
          examiner, “the claimed invention is not described in such full,             
          clear, concise and exact terms as to enable any person skilled in           
          the art to make and use the same, and/or for failing to                     
          particularly point out and distinctly claim the subject matter              
          which applicant regards as the invention” (page 5 of Answer).               
          According to the examiner, appellant’s specification does not               
          enable one of ordinary skill in the art to make a diamond                   
          because, in the words of the examiner, “the carbon separated from           
          the SiC is nascent atomic (‘elemental’) carbon and claim 1 states           
          that the temperature is not sufficiently high to permit diamond             
          formation from ‘non-diamondaceous form of elemental carbon’                 
          (which clearly describes nascent carbon atoms)” (page 5 of                  
          Answer).  We can understand the examiner’s criticism if claim 1             
          on appeal is not read in light of the specification.  However,              
          the specification discloses that the “non-diamondaceous form of             
          elemental carbon” that is not synthesized into diamond at the               
          claimed temperature is amorphous carbon or graphite (page 5 of              
          specification, lines 8-11).  On the other hand, the form of                 
          elemental carbon that is transformed into diamond by the claimed            
          process is the nascent atomic carbon resulting from the reaction            
          of silicon carbide and the reactant (page 8 of specification,               
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