Appeal No. 95-0326
Application No. 07/877,253
(d) heating said metal contact and said III-V semiconductor
to form said low resistance ohmic contact.
The references relied upon by the examiner as evidence of
obviousness are:
Anderson et al. (Anderson), “Ohmic Contacts To GaAs For High-
Temperature Device Applications,” Conference Paper at “Ohmic
Contacts” (March 25-27, 1981) pp. 39-42.
Japanese patent (Nagaoka ‘191) 60-161191 Jan. 30, 1987
Japanese patent (Nagaoka ‘192) 60-161192 Jan. 30, 1987
European patent (Cunningham) 252,300 Jan. 13, 1988
Claims 28 through 31, 33 through 36, 38, 39 and 43 stand
rejected under 35 U.S.C. § 103 as being unpatentable over
Anderson taken with Cunningham, and claims 9 through 12, 14
through 19, 21, 22 and 24 through 26 stand correspondingly
rejected over these references and further in view of either of
the Nagaoka references.
We refer to the Briefs and the Answer for a complete
exposition of the opposing viewpoints expressed by the appellant
and the examiner concerning the above noted rejections.
OPINION
For the reasons set forth below, none of the rejections
advanced by the examiner can be sustained.
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