Appeal No. 95-2503
Application No. 08/024,883
is independent of said first selected doping concentration and
junction depth;
a source region formed in said semiconductor substrate;
a channel region separating said source and drain
regions;
an insulating layer formed over said channel region and
over said second lightly doped drain region; and
a conductive gate formed over said insulating layer.
The examiner relies on the following references:
Lehrer et al. 4,442,449 Apr. 10, 1984
(Lehrer)
Nishizawa et al. 4,660,062 Apr. 21, 1987
(Nishizawa)
Liou et al. 4,771,014 Sep. 13, 1988
(Liou)
Toyoshima 4,935,379 Jun. 19, 1990
Mori 4,943,836 Jul. 24, 1990
Jain 4,949,136 Aug. 14, 1990
Furuhata (JP) 62-155682 2 Jan. 5, 1989
Claims 1 through 8 and 30 through 43 stand rejected under
the first and second paragraphs of 35 U.S.C. § 112 as,
respectively, relying on an interpretation of the term
2Our understanding of the Furuhata reference is derived
from an English translation thereof prepared by the United
States Patent and Trademark Office. A copy of that
translation is attached hereto.
3
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