Appeal No. 95-2859
Application 08/118,109
The Rejections on Appeal
Claims 1-6 stand finally rejected under 35 U.S.C. § 103 as
being unpatentable over the appellant’s own admitted prior art of
Figures 1-3 in view of Morris.
The Invention
The invention is directed to an integrated circuit including
a field effect transistor and a resistor. The gate of the
transistor is formed from a conductor layer and the resistor is
formed in a tub region of the same conductivity type as the
source and drain of the transistor. The resistor underlies a
"resistor masking conductor" formed from the conductor layer
also forming the gate of the transistor. Claim 1 is the only
independent claim and is reproduced below.
1. An integrated circuit including a field effect
transistor having a gate conductor formed from a conductor layer
overlying a semiconductor body, and having a source/drain region
of a given conductivity type that is coupled to a circuit
conductor through a resistor,
characterized in that said resistor is formed in a tub
region of said given conductivity type, with said tub region
being connected to said circuit conductor by means of a heavily
doped contact region of said given conductivity type that is
formed in said tub region;
and wherein said resistor underlies a resistor masking
conductor formed from said conductor layer, whereby the size of
said resistor is defined by said resistor masking conductor.
2
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