Appeal No. 95-4873
Application No. 08/174,723
c) a first quantum well on said insulating barrier;
d) a first tunneling barrier on said first quantum well;
e) a second quantum well on said first tunneling
barrier;
f) a second tunneling barrier on said second quantum
well;
g) a second terminal on said second tunneling barrier;
and
h) a third terminal on said second tunneling barrier,
where said third terminal is electrically isolated from said
second terminal.
The reference relied upon by the examiner is:
Yang et al. (Yang), “New field-effect resonant tunneling
transistor: Observation of oscillatory transconductance”, Appl.
Phys. Lett. 55(26), Dec. 25, 1989.
The appealed claims stand rejected under 35 U.S.C. §
102(b) as anticipated by or, in the alternative, under 35 U.S.C. §
103 as obvious over Yang.
The respective positions of the examiner and the
appellant with regard to the propriety of these rejections are set
forth in the final rejection (Paper No. 10) and the examiner's
answer (Paper No. 12) and the appellant's brief (Paper No. 11) and
reply brief (Paper No. 13).
Appellant's Invention
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