Appeal No. 97-3917
Application 08/467,650
incorporating capacitors. A first capacitor electrode and a
second capacitor electrode are formed to confront the first
capacitor electrode through a dielectric film. The first
capacitor electrode includes a first-layer electrode and a
second-layer electrode. The second-layer electrode is formed
of a material having a barrier property and has a
circumferential side surface located inner than the side
surface of the first-layer electrode. The dielectric film
contacts the upper and side surface of the first layer
electrode and is "spaced out" from the side surface of the
second layer electrode.
Representative independent claim 1 is reproduced below:
1. A semiconductor device incorporating capacitors
comprising:
a first capacitor electrode;
a capacitor dielectric film; and
a second capacitor electrode formed to confront said
first capacitor electrode with said capacitor dielectric film
interposed therebetween,
said first capacitor electrode including a first-layer
electrode which has an upper and lower surfaces and a
circumferential side surface, and a second-layer electrode
which is formed by being in contact electrically with said
first-layer electrode at the lower surface thereof and has a
circumferential side surface located inner than the side
surface of said first-layer electrode, said second-layer
3
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Last modified: November 3, 2007