Appeal No. 95-3885
Application 08/172,051
the pn junction under an overcurrent condition as claimed in
Appellant's claim 1.
Turning to Appellant's claims 5 and 8, we find that
these claims require that the resistive layer is to be placed
in between the substrate and the pn junction. In particular,
Appellant's claim 5 recites a "diode comprising: a
semiconductor substrate . . .; a first epitaxial layer . . .
with a high resistivity being formed on the semiconductor
substrate; a second epitaxial layer . . . formed on the first
epitaxial layer; a semiconductor region . . . which is formed
in the second epitaxial layer; and a pn junction defined
between the semiconductor region and the second epitaxial
layer." Also, Appellant's claim 8 recites a "diode
comprising: . . . an exothermic body provided below the pn
junction and between the semiconductor layer and the
substrate." Thus, Appellant's claims 5 and 8 both require
that the resistive layer or the exothermic body be positioned
within the diode under the pn junction and between the
substrate.
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