Appeal No. 96-0471
Application 07/995,582
Dr. Blanchard's explanation agrees with our own independent
analysis of the specification. The specification, as filed,
discloses a modification to the structure of figure 1 wherein
the buffer region is added underneath the P+ base region. The
examiner's response (EA8-10) is that the portions of the
specification relied on by Dr. Blanchard can be interpreted in
such a way that the lightly doped buffer region extends up the
sidewall and the P+ region extends to the buffer region.
While we understand the examiner's argument, we consider
the interpretation strained. For example, page 4 of the
specification states: "The primary, or metallurgical junction
is moved away from the surface dielectric into the bulk
silicon by adding a lightly doped layer adjacent to the deep
trench." We agree with Dr. Blanchard that this would be
interpreted to mean that "[a] new P-doped region is added
adjacent to the P+ doped region already present" (Blanchard
declaration, para. 6i). That is, a metallurgical PN junction
exists at the sidewall, such as shown in figure 1, to which a
lightly doped region is added to move the metallurgical
junction away from the sidewall. Accordingly, we find written
description support for the limitations that "the base region
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