Appeal No. 96-4052
Application 08/198,511
Forrest discloses a process for photoelectrochemically
etching n-type compound semiconductors. The only difference
argued between Forrest and the subject matter of claim 31 is
claim 31's limitation that the semiconductor layers are
silicon carbide. Forrest states (col. 2, lines 40-46): "The
electrochemical photoetching procedure applies to a certain
class of semiconductors, namely compound semiconductors
including III-V and II-VI compound semiconductors. Typical
semiconductors are CdS, CdSe, HgCdTe, GaP, GaAs, AlAs, AlP,
AlSb, InSb, InAs, InP, GaInAs, GaInP, GaInAsP, GaAlP and
GaAlAs." The listed "typical semiconductors" are all III-V or
II-VI compound semiconductors.
Appellants argue (Br4): "Careful reading of the Forrest
et al. process, as described in column 2, lines 40-45, shows
that the Forrest et al. process applies only to a certain
class of semiconductors this class being III-V and II-VI
compound semiconductors. . . . Applicant submits that while
SiC is arguably considered a compound semiconductor, it is
certainly not a III-V or II-VI compound semiconductor."
The examiner finds that Chang "teaches that SiC can also
be electrochemically etched" (FR2; EA3) and concludes (FR2-3;
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