Appeal No. 97-0168
Application No. 08/348,991
44, 46, and 48, which are all of the claims pending in this
application.
The appellant's invention relates to a light receiving
device such as a photodiode array including plural light
detecting regions surrounded by a depleted region of an
absorption layer formed on a semiconductor material. Claim 23
is illustrative of the claimed invention, and it reads as
follows:
23. A light receiving device comprising;
a semiconductor layer made of a first conductivity
type InP;
an absorption layer formed on the semiconductor
layer and made of InGaAs;
a window layer formed on said absorption layer and
made of InP;
a plurality of second conductivity diffused light
detecting regions formed at and along predetermined portions
of said window layer, each of said second conductivity
diffused light detecting regions outputting an electric signal
when a light signal is made incident into the respective light
detecting region; and
second conductivity diffused collecting regions
formed at and below said window layer down to said absorption
layer, said second conductivity diffused collecting regions
being provided at portions of said window layer extending
between adjacent ones of said second conductivity diffused
light detecting regions;
wherein said second conductivity collecting regions
penetrate said window layer to reach said light detecting
regions; and
one of the collecting regions is provided towards an
edge of said device and a boundary between said one collecting
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