Appeal No. 1997-0278
Application No. 08/367,917
and
a gate separated from the source and drain terminal regions by a layer of silicon
dioxide;
first conductive means connecting the drain terminal region of the first transistor
device to a high voltage node to be discharged, wherein the high voltage node has
a voltage of approximately 7-12 volts;
second conductive means connecting the gate of the first transistor device to a
biasing potential equal to an operating voltage of approximately 3 volts used in a
low voltage integrated circuit,
third conductive means connecting the source terminal region of the second
transistor device to a ground potential; and
means for providing a positive input potential to the gate of the second transistor
device to enable the first and second transistor devices and discharge the high
voltage node without causing breakdown of the silicon dioxide layers or any junction
of the first and the second transistor devices.
The prior art references of record relied upon by the Examiner in rejecting the
appealed claims are:
Lee et al. (Lee) 4,922,311 May 01, 1990
Sato et al. (Sato) 5,016,077 May 14, 1991
Yamamoto 5,239,197 Aug 24, 1993
Claims 3, 5, 6 and 10 stand rejected under 35 U.S.C. § 103 as being unpatentable
over Sato. Claims 1-6, 9, 10, 16 and 17 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Sato in view of Lee. Claims 11 and 14 stand rejected
under 35 U.S.C. § 103 as being unpatentable over Sato in view of Yamamoto. Claims
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