Appeal No. 1997-0513
Application 08/367,644
been withdrawn from consideration.
The disclosed invention provides a vertical contact
structure for high density integrated circuits such as DRAMs.
The contact structure includes a vertical contact lying
between two gates and has an insulating sleeve separating the
vertical contact from a horizontal conductive layer. The
conductive layer has an opening which lies over a doped region
and extends partly over the two gates. The invention is
further illustrated by the following claim.
19. An integrated circuit contact structure, comprising:
(a) first and second insulated gates at the surface of a
substrate;
(b) sidewall insulators on said first and second gates,
said sidewall insulators made of a first material;
(c) a doped region in said substrate at said surface and
located between said gates;
(d) a conductive layer spaced from and overlying said
gates, said conductive layer having an opening over said doped
region and extending over a portion of each of said gates; and
(e) a contact extending from said doped region through
said opening to a higer [sic, higher] level than said
conductive layer, with the portion of said contact in said
opening not extending over any portion of said gates.
-2-
Page: Previous 1 2 3 4 5 6 7 Next
Last modified: November 3, 2007