Ex parte UGGE et al. - Page 2




          Appeal No. 1997-0601                                                        
          Application 08/161,878                                                      


          subject matter.                                                             


          The disclosed invention relates to an overvoltage                           
          protection circuit.  The invention is particularly useful for               
          protecting devices attached to a standard telephone line.                   
          Overvoltages can occur between the two telephone lines, or                  
          between these lines and ground.  Various arrangements of                    
          semiconductive switches are disclosed, such as the two lateral              
          PNPN switches, to provide for the drain to ground in case of                
          an overvoltage situation.  Additionally, the invention is an                
          advancement over the art because it integrates all of the                   
          components necessary to create a three-way balanced protective              
          circuit into a single monolithic integrated circuit.  The                   
          invention is further illustrated by the following claim.                    
               Claim 1 is reproduced below as representative of the                   
          invention.                                                                  
               1.   An overvoltage protection circuit, comprising:                    
               first and second regions, formed within a substrate                    
          having a first conductivity type, said first and second                     
          regions having a second conductivity type and having the same               
          area;                                                                       
               third and fourth regions, having the first conductivity                
          type, formed within said first and second regions,                          
                                         -2-                                          





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