Appeal No. 1997-3415
Application No. 08/037,849
specification, Appellant discloses that prior art spin-on
class had dielectric constants in excess of 3.8.
Appellant further points out that it would be desirable
to have a spin-on dielectric having a lower dielectric
constant.
On page 2 of the specification, Appellant discloses that
a spin-on dielectric having a lower dielectric constant is
achieved by creating a spin-on dielectric that is a silicon
based siloxane polymer wherein each silicon atom in the
polymer is bonded to a polarization reducing group, and to
three oxygen atoms each of which is bonded to one other
silicon atom.
Appellant's claim 16 is reproduced as follows:
16. A method of forming a dielectric layer on a
semiconductor wafer comprising:
providing a semiconductor wafer having a surface;
forming a mixture by combining ingredients consisting
essentially of an organosilane compound having an aromatic
group on every silicon atom, a solvent, a catalyst, and water;
and
forming the dielectric layer on the surface of the
semiconductor wafer by curing the mixture on the surface so
that the mixture forms a siloxane polymer having an aromatic
group attached to every silicon atom of the polymer.
2
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