Appeal No. 1999-2313
Application No. 08/396,288
The disclosed invention pertains to a
superconductive structure which carries a higher maximum
density of supercurrent without transitioning out of a
superconducting state. More particularly, the invention
uses a high critical temperature (T ) superconductive
c
copper oxide film having a crystallographic structure
with parallel Cu-O crystallographic planes sufficient to
create a critical supercurrent anisotropy in the film.
The path of flow of supercurrent through the copper oxide
superconductive material is determined by the geometry of
the superconductive structure and the means for flowing
the supercurrent through the superconductive structure.
Representative claim 45 is reproduced as
follows:
45. An improved superconductive structure which
carries a higher maximum density of supercurrent
without transitioning out of a superconducting
state, comprising:
a high T superconductive copper oxide film for
c
carrying supercurrent within said film in a
direction substantially parallel to a major surface
thereof, said film having a crystallographic
structure with parallel Cu-O crystallographic planes
extending therein sufficient to create a critical
supercurrent anisotropy in said film, said critical
supercurrent anisotropy allowing much more
supercurrent to flow along said parallel Cu-O
3
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