Appeal No. 1998-0039
Application No. 08/372,701
metal film onto a substrate by use of a two-step pressure
regime, initially using a high pressure until a conductive
bridge is
formed between the clamping ring and the substrate, followed
by a conventional, low sputter deposition pressure (Brief,
pages 3-4). A copy of illustrative independent claim 29 is
attached as an Appendix to this decision.
In addition to the admitted prior art from pages 1-4 of
the specification, the examiner relies upon the following
evidence of obviousness:
Nozaki et al. (JP ‘672) 60-145672 Aug. 1,
1985
(Published Japanese Application)
Jitsukawa et al. (JP ‘961) 61-183961 Aug. 16,
1986
(Published Japanese Application)1
Ku et al. (Ku), “Use of ion implantation to eliminate stress-
induced distortion in x-ray masks,” J. Vac. Sci. Technol. B,
2174-2177, Vol. 6, No. 6, Nov./Dec. 1988.
1All citations from JP ‘672 and JP ‘961 refer to full
English translations of these documents, now of record.
During the prosecution of this application, the examiner and
appellant apparently have relied upon English abstracts of
these documents (see the Answer, page 3). However, we do not
attach copies of these translations to this decision since
appellant’s attorney, at oral hearing, indicated that
appellant is now in possession of English translations of the
JP ‘672 and JP ‘961 documents.
2
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