Appeal No. 1998-0765
Application No. 08/451,853
The disclosed invention relates to electrical connections
to high dielectric constant materials in microelectronic
structures such as capacitors. One embodiment of the
invention comprises a conductive lightly donor doped
perovskite layer, and a high-dielectric constant material
layer overlaying the conductive lightly donor doped perovskite
layer. The conductive lightly donor doped perovskite layer
provides a substantially chemically and structurally stable
electrical connection to the high-dielectric-constant material
layer. The lightly donor doped perovskite can generally be
deposited and etched by effectively the same techniques that
are developed for the dielectric. The same equipment may be
used to deposit and etch both the perovskite electrode and the
dielectric. Further understanding of the invention can be
obtained by the following claim:
16. A method of forming a thin-film microelectronic
capacitor on an integrated circuit, said method
comprising:
(a) forming an electrically conductive buffer
layer on said integrated circuit;
(b) forming a conductive, lanthanum doped barium
strontium titanate layer having between about 0.01
2
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