Appeal No. 1998-1669
Application No. 08/508,563
1. In a method for fabricating a transparent
conductive ITO film which has In and O as basic
component elements and Sn added as a donor in an
atmosphere comprising a mixture of rare gas and
oxygen
gas by a sputtering process using a mixture of
oxides of In and Sn as a target, said method
comprising:
a first step of sputtering a transparent
conductive ITO film on a substrate in an atmosphere
with a controlled partial pressure of oxygen, and
a second step of interrupting said first step
and performing discharge in an atmosphere where a
partial pressure of oxygen is 1 x 10 Torr or more,-3
which is higher than the partial pressure of oxygen
in said first step, to compensate for the oxygen
deficiency in said target.
The subject matter on appeal relates to a method for
fabricating a transparent conductive ITO film which has In and
O as basic component elements and Sn as a donor. (Appeal
brief, page 3.) The method comprises two steps. (Id.)
Specifically, the first step involves sputtering a transparent
conductive ITO film on a substrate in an atmosphere with a
controlled partial pressure of oxygen. (Id.) The second step
involves interrupting the first step and performing discharge
in an atmosphere where the partial pressure of oxygen is 1 x
10 Torr or more, which is higher than the partial pressure of-3
oxygen in the first step, to compensate for oxygen deficiency
in the target. (Id.) According to the appellant, the present
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