Appeal No. 1998-1727
Application No. 08/340,097
BACKGROUND
The invention generally relates to semiconductor technology and more particularly
is directed to a method of forming a layer over a surface of a silicon substrate.
(Specification, p. 1). Claim 1 which is representative of the invention is reproduced
below:
1. A method of forming a layer over a surface of a silicon substrate, the layer
being lattice matched to the silicon substrate, comprising the steps of:
cleaning the surface of the silicon substrate;
forming a passivation layer having a thickness in excess of one monolayer
on the silicon substrate; and
forming the lattice matched layer on the passivation layer.
As evidence of unpatentability, the Examiner relies on the following references:
Kasai, et al. (Kasai) 5,262,633 Nov. 16, 1993
de Lyon 5,399,206 Mar. 21, 1995
THE REJECTIONS
The Examiner rejected claims 1, 2, 6, 8, 9, 12, 13, and 15 to 23 under 35 U.S.C.
§ 102(e) as anticipated by de Lyon; claims 1, 2, and 6 to 23 under 35 U.S.C. § 103(a) over
de Lyon; and claims 4, 5 and 24 under 35 U.S.C. § 103(a) over the combination of
de Lyon and Kasai. (Answer, pp. 3 and 4).
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