Appeal No. 1999-0844
Application 08/633,598
Representative claim 10 is reproduced below:
10. An image sensor structure which provides low voltage electronic shuttering that
is conducive to internal gettering comprising:
a substrate of n-type conductivity having a top and a bottom surface;
a first laterally uniform, deep n-layer on top of the substrate and underneath the
entire area of the image sensor and a second laterally uniform n-layer on top of the first
laterally uniform n-layer; and
a laterally uniform, lightly doped p-layer formed in the second laterally uniform n-
layer, such that the p-layer is located beneath the image sensor and above the n-layer
substrate and the first deep n-layer and;
wherein the first laterally uniform, deep n-layer is more heavily doped than the
second laterally uniform n-layer.
The following reference is relied upon by the examiner:
Watanabe 5,404,039 Apr. 4, 1995
Claims 10, 11 and 13 through 16 stand rejected under 35 U.S.C. § 102 as
being anticipated by Watanabe. As to a separate rejection relying on this reference,
the examiner asserts unpatentability under 35 U.S.C. § 103 of claims 1 through 3, 5, 10, 11
and 13 through 16, based upon Watanabe and appellants' admitted prior art Figure 4.
Rather than repeat the positions of the appellants and the examiner, reference is
made to the briefs and the answer for the respective details thereof.
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