Appeal No. 1999-0886
Application No. 08/722,738
charge in the capacitor, hot carriers must be generated during programming for storage in
the capacitor.
Representative independent claim 1 is reproduced as follows:
1. A electronic programmable read-only-memory comprising:
(a) a field effect transistor having: relatively heavy doped source and
drain regions separated by an oppositely doped channel region; a gate
electrode disposed over the channel region; lightly doped regions, having
the same conductivity type as the source and drain regions, extending
laterally from the source and drain regions to peripheral regions of the
channel region; and, relatively heavy doped regions, having the same
conductivity type as the source and drain regions, extending laterally from the
source and drain regions, through and beyond the lightly doped regions, into
the channel region; and
(b) a charge storing capacitor coupled to the gate electrode and
adapted to store charge produced in the channel region in response to a
logic state programming voltage applied between one of the source and
drain regions and the gate electrode.
The examiner relies on the following references:
Nakamura et al. (Nakamura) 5,300,799 Apr. 05, 1994
Hamamoto et al. (Hamamoto) 5,146,300 Sep. 08, 1992
Miller et al. (Miller) 5,046,043 Sep. 03, 1991
Momi JP 06-132,489 May 13, 1994
Claims 1-6 stand rejected under 35 U.S.C. § 103. As evidence of obviousness, the
examiner offers Nakamura and Momi with regard to claims 1, 2, 4 and 5, adding
Hamamoto and Miller to the combination with regard to claims 3 and 6.
3
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