Appeal No. 2000-0037
Application 08/627,631
the prior art. See, for example, 37 C.F.R. 1.71(b). This
appellants' claims fail to do.
OTHER ISSUES
In the event appellants elect further prosecution of their
invention in response to the new ground of rejection, we advise
the appellants and the examiner to carefully consider the
relevance of U.S. Patent Number 5,000,113, issued to Wang et al.,
cited at page 9 of the specification and assigned to Applied
Materials, Incorporated, the assignee of appellants' application
in this appeal.
As described in the specification, Wang et al. discloses
apparatus suitable for performing appellants' herein claimed
process. Wang et al. discloses methods for preparing conformal,
planar dielectric layers on IC wafers. At column 22, Wang et al.
disclose that their method makes it unnecessary to dope the
silicon oxide coatings but that doping at low levels by
incorporating TMP and/or TMB into the reactant gas mixture
containing silicon, oxygen and carrier gas is an option and that
the films prepared using the dopants have "sufficient reflow
characteristics." (column 22, lines 20 through 35). Doping is
also recognized as effective in lowering the reflow temperature
of the film. Helium is disclosed throughout Wang et al. as the
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