Appeal No. 2000-0751
Application No. 08/903,549
(filed Nov. 13, 1996)
Claim 11 stands rejected under 35 U.S.C. 102(e) as
anticipated by Yee.
Claims 27 and 30 stand rejected under 35 U.S.C. 102(b) as
anticipated by either one of Yoh or Crouse.
Claims 1-10 and 12-26 stand rejected under 35 U.S.C. 103 as
unpatentable over Yee.
Claim 29 stands rejected under 35 U.S.C. 103 as unpatentable
over either one of Yoh or Crouse.
Reference is made to the brief and answer for the respective
positions of appellant and the examiner.
OPINION
Turning, first to the rejection of claim 11, the examiner
points to the abstract of Yee and contends that the claimed
subject matter is met by Yee because transistors which are formed
inside of Yee’s 350 micron radius have thicker gate oxides than
the transistors formed outside of this radius. The examiner
interprets the last two lines of the claim as requiring only the
“ability” to be connected to a bias voltage and, contending that
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