Appeal No. 2000-1585
Application No. 08/883,427
a) providing a semiconductor device comprising a
semiconductor substrate, at least two FET or bipolar
transistor devices and a trench in the substrate
located between said devices;
b) flowing a flowable oxide into said trench;
c) curing said flowable oxide; and
d) annealing said flowable oxide, wherein said
annealing is carried out in the presence of hydrogen to
thereby cause hydrogen to diffuse into the flowable
oxide.
The examiner relies upon the following references:
Sobczak 4,567,834 Mar. 18, 1986
Ballance et al. (Ballance) 5,320,868 Jun. 14, 1994
Claim 27 stands rejected under 35 U.S.C. § 103(a) as being
unpatentable over Sobczak in view of Ballance.
Rather than repeat the arguments of appellants and the
examiner, we make reference to the brief (paper no. 17) and the
examiner’s answer (paper no. 18) for the respective details
thereof.
OPINION
We have considered the rejections advanced by the examiner
and the supporting arguments. We have, likewise, reviewed the
appellants’ arguments set forth in the brief.
We affirm.
4
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007