Appeal No. 2001-0014 Page 11
Application No. 09/070,899
VanZeghbroeck nor Sato ‘414 discloses bonding a chip with
solder upon a ceramic substrate and using the active device
chip as one of the walls for hermetically sealing the
enclosure.
We further find that Chen discloses a method of bonding
a silicon chip having a cavity to an insulating glass
substrate which hermetically seals the cavity and the
conductive feedthrough line formed on the substrate. The
bonding requires
field-assisted bonding technique that heats a layer of silicon
oxide facing at high temperature while the chip and the
substrate are pressed together under application of a voltage
(col. 4, lines 34-38). Thus, the feedthrough line of Chen is
actually insulated within the facing layer and sandwiched
between the chip and the substrate. Furthermore, the device
of Chen is a capacitive pressure sensor that includes only a
cavity in silicon chip having a thinned down portion and an
electrode for converting pressure to electrical signals (col.
3, line 31). Therefore, unlike an array of opto-electronic
devices as recited in the appellant’s claim 6, no active
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