Appeal No. 2001-1133 2
Application No. 09/014,806
THE INVENTION
The invention is directed to an anisotropic etching process wherein the etchant gas
comprises fluorohydrocarbon, diatomic oxygen and a carbon source. Each of the
components is present in a specific volume. Additional limitations are described in the
following illustrative claim.
THE CLAIMS
Claim 1 is illustrative of appellants’ invention and is reproduced below.
1. An anisotropic etching process for a nitride layer on a substrate, the process comprising
etching with an etchant gas comprised of a hydrogen-rich fluorohydrocarbon, diatomic
oxygen, and a carbon source, wherein the fluorohydrocarbon is present in the gas at 7% -
35% by volume, the diatomic oxygen is present in the gas at 1% - 35% by volume, and
the carbon source is present in the gas at 30% - 92% by volume.
THE REFERENCES OF RECORD
As evidence of obviousness, the examiner relies upon the following reference:
Kadomura 4,654,114 Mar. 31, 1987
THE REJECTIONS
Claims 1 through 3, 5 through 10, 12, 13, and 15 through 18 stand rejected
under 35 U.S.C. §103(a) as being unpatentable over Kadomura.
Claims 1 through 3, 5 through 10, 12, 13, and 15 through 18 stand rejected
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