Appeal No. 2001-2107
Application No. 09/349,439
Claim 13 is illustrative of the claimed invention, and it reads as follows:
13. A method of forming dielectric layers, comprising the action of depositing a thin film of
a dielectric material with an anisotropic ferroelectric polarization onto a surface from the vapor
phase, while applying an RF bias to said surface during a first portion of said depositing and
removing said RF bias during a second portion of said depositing.
The references relied on by the examiner are:
Lampe et al. (Lampe) 5,146,299 Sept. 8, 1992
Anderson et al. (Anderson) 5,390,072 Feb. 14, 1995
Paz de Araujo et al. (Paz de Araujo) 5,519,234 May 21, 1996
Drab et al. (Drab) 5,638,252 June 10, 1997
Wolf et al. (Wolf), Silicon Processing for the VLSI Era, Lattice Press, Vol. 1, page 174 (1990).
Claims 13, 14, 17 and 23 stand rejected under 35 U.S.C. § 103(a) as being unpatentable over
Lampe in view of Wolf.
Claims 18 and 19 stand rejected under 35 U.S.C. § 103(a) as being unpatentable over Lampe
in view of Wolf and Anderson.
Claims 20 and 21 stand rejected under 35 U.S.C. § 103(a) as being unpatentable over Lampe
in view of Wolf and Drab.
Claim 22 stands rejected under 35 U.S.C. § 103(a) as being unpatentable over Lampe in
view of Wolf and Paz de Araujo.
Reference is made to the brief (paper number 7) and the answer (paper number 8) for the
respective positions of the appellants and the examiner.
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