Appeal No. 2002-1411
Application No. 09/144,535
Background
The invention relates to a semiconductor device having a
Schottky diode and a method of manufacturing the device. Appeal
brief, page 2. According to appellant,“[t]he inventive
semiconductor device has a higher precision for the location of
structures with respect to each other in silicon. It thus uses
the silicon area more efficiently and permits smaller
semiconductor devices that include Schottky diodes than was
possible in the prior art.” Id., pages 2-3. These advantages
are achieved by self-aligning the various structures of the
invention to each other when formed, such that the structures are
self-aligned in the final completed device. Id., page 5.
Discussion
1. Rejection of claims 1, 3-10, 12-15, 17-21, 32-35 and
37-41 under 35 U.S.C. § 112, first paragraph
It is the examiner’s position that there is no support in
the specification for a body region being self-aligned to the
gate and for a source region being self-aligned to the recess and
having a Schottky contact as recited in the claims. Examiner’s
answer, pages 5-6. In particular, while the examiner concedes
that appellant’s structure “is formed self-aligned by using one
masking structure,” the elements of the structure do not
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