The opinion in support of the decision being entered
today was not written for publication and
is not binding precedent of the Board
Paper No. 35
UNITED STATES PATENT AND TRADEMARK OFFICE
__________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
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Ex parte GUNMA-KEN EIICHI IINO
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Appeal No. 2003-0136
Application No. 09/229,086
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ON BRIEF
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Before WARREN, DELMENDO, and PAWLIKOWSKI, Administrative Patent
Judges.
PAWLIKOWSKI, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal from the final rejection of
claims 1 through 4.
Claim 1 is illustrative, and is set forth below:
1. A method of producing a silicon monocrystal which
comprises preparing a silicon seed crystal having a sharp tip
end, and melting down a part of the silicon seed crystal from a
tip end to a position having a first thickness, followed by
performing a necking operation to form a tapered necking part and
a neck portion, and subsequently pulling a monocrystal ingot
after increasing a diameter, wherein the first thickness is twice
as large as the diameter of the neck portion to be formed or
more; said necking operation is performed in such a way that the
tapered necking part is formed at an early stage by pulling the
crystal with gradually decreasing the diameter to a minimum
diameter of 5 mm or more, and then a neck portion is formed,
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