Appeal No. 2003-0230
Application No. 09/624,025
The Rejections
I. Claims 1, 2, 4, 5, 8-10, 12, and 14 stand rejected under
35 U.S.C. § 103(a) as being unpatentable over Gardner in view of
Arnold and Sheng.
II. Claim 6 stand rejected under 35 U.S.C. §103(a) as being
unpatentable over Gardner in view of Arnold and Sheng, as applied
to claims 1 and 9, further in view of Wu.
III. Claims 3, 11, and 17 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Gardner in view of Arnold and
Sheng as applied to claims 1 and 9, further in view of Peidous.
IV. Claims 15, 16, 18, and 20 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Gardner in view of Arnold,
Sheng, and Wu.
V. Claim 17 stands rejected under 35 U.S.C. § 103(a) as being
unpatentable over Gardner in view of Arnold and Sheng as applied
to claim 15, further in view of Peidous.
The Invention
The invention relates to a method of shallow trench isolation
used to isolate adjacent components in sub-micron devices in the
fabrication of integrated circuits. (Specification, page 1, lines
6-8). A trench is etched, and an oxide layer is grown along the
bottom and sidewalls of the trench. Oxygen or field isolation
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