Ex Parte SABIN et al - Page 2




          Appeal No. 2003-0241                                                        
          Application No. 09/271,615                                                  


                         depositing a dielectric layer over said metal                
          layer and over said array of openings in said metal layer;                  
                         forming one or more vias in said dielectric layer;           
          and                                                                         
                         forming a bonding pad that is electrically                   
          connected to said metal layer.                                              
               The examiner relies upon the following references as                   
          evidence of obviousness:                                                    
          Chittipeddi et al.            5,986,343             Nov. 16, 1999           
          (Chittipeddi)                                 (filed May 4, 1998)           
          Lin                           6,025,631             Feb. 15, 2000           
                                                      (filed Nov. 24, 1998)           
               Appellants' claimed invention is directed to a method for              
          forming a bonding pad structure over an active circuit of an                
          integrated circuit device.  The method entails electrically                 
          connecting the bonding pad to an underlying, cushioning metal               
          layer through vias in a dielectric layer that is disposed between           
          the bonding pad and the metal layer.  According to appellants,              
          "[t]he use of the support structure 20 and 30 can allow active              
          circuits 10 to be placed directly under the bonding pads 50 where           
          the support structure 20 and 30 can protect the underlying active           
          circuits 10 from shear and compressive stresses occurring during            
          bonding processes (Figure 2)" (page 2 of Brief, penultimate                 
          paragraph).                                                                 



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