Ex Parte MOSELY et al - Page 2




          Appeal No. 2003-0548                                       Page 2           
          Application No. 09/370,599                                                  


                                     BACKGROUND                                       
               Appellants’ invention relates to an apparatus for processing           
          a semiconductor substrate.  An understanding of the invention can           
          be derived from a reading of exemplary claims 14 and 40, which              
          are reproduced below.                                                       
               14.  An apparatus for providing improved processing of                 
               a semiconductor substrate, comprising:                                 
                    a) a load lock chamber, at least one means for                    
               chemical vapor deposition (CVD), and at least one means                
               for physical vapor deposition (CVD); and                               
                    b) an intermediate substrate transport region                     
               comprising a first substrate transport chamber and a                   
               second substrate transport chamber, wherein one or more                
               of the at least one means for CVD and one or more of                   
               the at least one means for PVD are disposed on the                     
               second transport chamber.                                              
               40. An apparatus for providing improved processing of a                
               semiconductor substrate, comprising:                                   
                    a) a load lock chamber,                                           
                    b) an intermediate substrate transport region                     
               connected to the load lock chamber, the intermediate                   
               subtsrate transport region comprising a first substrate                
               transport chamber and a second substrate transport                     
               chamber, wherein the second substrate transport chamber                
               has a lower vaccum than the first substrate transprot                  
               chamber;                                                               
                    c) one or more processing chambers, wherein at                    
               least one of the one or more processing chambers is a                  
               chemical vapor deposition (CVD) processing chamber                     
               disposed on the second substrate transport chamber, and                
                    d) one or more vaccum pumps communicating with the                
               intermediate substrate transport region and each of the                
               one or more processing chambers.                                       











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