Appeal No. 2003-1286 2
Application No. 08/898,187
THE INVENTION
The invention is directed to a structure comprising a plurality of silicon rows having
a specific width dimension embedded in an oxidized substrate and separated by rows of
oxide. Additional limitations are described in the following illustrative claim.
THE CLAIM
Claim 11 is illustrative of appellant’s invention and is reproduced below.
11. A silicon on insulator structure, comprising:
a plurality of silicon rows, having a width dimension of one micron or less,
embedded in an oxidized substrate; and
a plurality of oxide rows between the silicon rows.
THE REFERENCES OF RECORD
As evidence of obviousness, the examiner relies upon the following references:
Soclof 4,580,331 Apr. 8, 1986
THE REJECTIONS
Claims 11 through 39 stand rejected under 35 U.S.C. §103(a) as being
unpatentable over Soclof.
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