Appeal No. 2003-2096
Application No. 09/847,202
APPENDX
4. An integrated circuit structure, comprising:
semiconductor material having, active regions with
a gate structure thereon;
an isolation region comprising a trench in said
semiconductor material having an electrically
insulating liner on the surface of said trench, a first
portion of said isolation region extending to the
surface of said semiconductor material and conformal to
said semiconductor surface, a second portion of said
isolation region extending above and within the
confines of said trench, said second portion extending
above the surface of said active regions of
semiconductor material and separating said active
regions of semiconductor material, said liner extending
over said active region; and
a dielectric sidewall spacer on and extending over
said isolation region extending above said active
regions of said semiconductor material and inclined
toward said isolation region from said semiconductor
surface and over a portion of said liner extending over
said active region.
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