Appeal No. 2005-0168
Application No. 10/138,393
forming a seed layer on the barrier layer in the via, the
seed layer including a first material and a second material, the
first material providing an ability for the second material to
maintain an adherence to the barrier layer.
The examiner relies upon the following reference in the
rejection of the appealed claims:
Shue 6,436,825 B1 Aug. 20, 2002
Appellants' claimed invention is directed to a method for
improving adhesion between layers of an integrated device. The
method entails utilizing a seed layer comprising first and second
materials on a barrier layer that is formed in a via in a
substrate layer. The first material, such as silicon, aids in
the adherence of the second material, such as copper, to the
barrier layer.
Appealed claims 1-5, 9-11, 13-17 and 19-24 stand rejected
under 35 U.S.C. § 102(e) as being anticipated by Shue. Claim 18
stands rejected under 35 U.S.C. § 103(a) as being unpatentable
over Shue.
We have thoroughly reviewed the respective positions
advanced by appellants and the examiner. In so doing, we find
ourselves in agreement with appellants that Shue does not
describe the claimed method within the meaning of 35 U.S.C.
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