Ex Parte Hu et al - Page 4



          Appeal No. 2005-0998                                                        
          Application No. 10/054,605                                                  

               We will approach the two principal issues in this case much            
          the same as appellants have done in their reply brief.                      
               First, with regard to the combination of Hong with either              
          Dubin, Maydan, or Lee (rejections 1, 2, and 3 above), we note               
          that appellants stipulate on page 3 of their brief that, for each           
          rejection, all of the involved claims stand or fall together.               
          Thus, we need only consider claim 18.                                       
               With regard to claim 18, we agree with the examiner that it            
          would have been prima facie obvious within the context of 35                
          U.S.C. § 103 to form an ultra-thin barrier layer, i.e.,                     
          conductive film, over the surface of the conductor element, i.e.,           
          copper material, in any of the primary references to obtain the             
          benefit of deep submicron low-resistance copper interconnects as            
          suggested by Hong (col. 1, ll. 32-34).                                      
               Moreover, since instant claim 18 does not specify any                  
          particular conductive film material, it would have been                     
          especially obvious within the purview of 35 U.S.C. § 103 to                 
          substitute thin diffusion barriers composed of metal oxides or              
          metal carbides, as taught by Hong, for those disclosed in Dubin,            
          Maydan, or Lee since Hong suggests that such barrier layer                  



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