Appeal No. 2006-0312
Application No. 10/145,171
In addition to the admitted prior art found in appellants’
specification, the examiner relies upon the following references:
Mitsubishi Elec. Corp. 02-111506 Apr. 2, 1990
(Published Japanese Patent Application)(hereinafter referred to
as JP ‘506).
Hitachi, Ltd. 04-7855 Jan. 13, 1992
(Published Japanese Patent Application)(hereinafter referred to
as JP ‘855).
Fuji Film Micro Device KK, 06-310480 Nov. 4, 1994
(Published Japanese Patent Application)(hereinafter referred to
as JP ‘480).
Toshiba Corp. 08-124885 May 17, 1996
(Published Japanese Patent Application)(hereinafter referred to
as JP ‘885).
Disco Abrasive Sys., Ltd. 10-15790 Jan. 20, 1998
(Published Japanese Patent Application)(hereinafter referred to
as JP ‘790).
Appellants’ claimed invention is directed to an apparatus
for reducing the thickness of a substrate, such as a
semiconductor wafer, with a grinder. The apparatus comprises an
air ionizing source which directs ionized air onto the substrate
prior to its dicing and after the thickness of the substrate is
reduced by the grinder. The ionized air reduces accumulation of
undesirable electrostatic charge on the substrate and reduces its
warpage.
Appealed claims 10, 11 and 13 stand rejected under 35 U.S.C.
§ 102(b) as anticipated by or, in the alternative, under 35
U.S.C. § 103(a) as being unpatentable over JP ‘790. The appealed
claims stand rejected under 35 U.S.C. § 103(a) as follows:
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