Ex Parte Paton et al - Page 1



            The opinion in support of the decision being entered today was not      
            written for publication and is not binding precedent of the Board.      

                     UNITED STATES PATENT AND TRADEMARK OFFICE                      
                                   _____________                                    
                         BEFORE THE BOARD OF PATENT APPEALS                         
                                 AND INTERFERENCES                                  
                                   _____________                                    
                     Ex parte ERIC PATON, PAUL RAYMOND BESSER,                      
                          SIMON S. CHAN and DAVID E. BROWN                          
         _____________                                                              
                                Appeal No. 2006-1231                                
                             Application No. 10/180,686                             
                                   ______________                                   
                                      ON BRIEF                                      
                                   _____________                                    
         Before OWENS, LEVY, and NAPPI, Administrative Patent Judges                
         OWENS, Administrative Patent Judge.                                        

         DECISION ON APPEAL                                                         
              This appeal is from a rejection of claims 12-15, 17-19                
         and 29-35, which are all of the pending claims.                            
                                   THE INVENTION                                    
              The appellants claim a semiconductor device having, on an             
         active region, a silicide contact comprising a first metal                 
         silicide and an amount of an additional material that causes the           
         formation of that metal silicide to be energetically favored over          
         the formation of a second metal silicide.  Claim 12 is                     
         illustrative:                                                              

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