Ex Parte Johnson et al - Page 10



         Appeal No. 2006-1797                                                       
         Application No. 09/866,319                                                 
         Cir. 1997).  Further, it has been held that: “[W]here the claimed          
         and prior art products are identical or substantially identical            
         in structure or composition, or are produced by identical or               
         substantially identical processes, a prima facie case of either            
         anticipation or obviousness has been established.”  In re Best,            
         562 F.2d 1252, 1255, 195 USPQ 430, 433 (CCPA 1977). “When the PTO          
         shows a sound basis for believing that the products of the                 
         applicant and the prior art are the same, the applicant has the            
         burden of showing that they are not.”  In re Spada, 911 F.2d 705,          
         709, 15 USPQ2d 1655, 1658 (Fed. Cir. 1990). Therefore, the prima           
         facie case can be rebutted by evidence showing that the prior art          
         products do not necessarily possess the characteristics of the             
         claimed product.  In re Best, 562 F.2d at 1255, 195 USPQ at 433.           
         See also Titanium Metals Corp. v. Banner, 778 F.2d 775, 227 USPQ           
         773 (Fed. Cir. 1985).                                                      

              Now, the question before us is what Marty would have taught           
         to one of ordinary skill in the art?  To answer this question, we          
         find the following facts:                                                  
              At column 3, lines 25-39, Marty states the following:                 
                   [A] stack 8 of three layers 80, 81 and 82, within which          
                   the future base of the transistor will be produced, is           
                   then epitaxially grown.  More precisely, a first layer           
                   of undoped silicon 80 is epitaxially grown over a                
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