Appeal No. 2006-2922 Page 2
Application No. 10/012,677
THE INVENTION
The disclosed invention pertains to methods of forming silicon-doped
aluminum oxide, and methods of forming transistors and memory devices.
Representative claim 16 is reproduced as follows:
16. A method of forming a transistor, comprising:
• forming an insulating layer of silicon-doped porous aluminum oxide
over a substrate, the forming the insulating layer of silicon-doped
porous aluminum oxide comprising:
o evaporating aluminum oxide from a single crystal sapphire;
o evaporating silicon monoxide from a source comprising silicon
monoxide;
o forming a vapor mixture comprising the evaporated aluminum
oxide and evaporated silicon monoxide in a reaction chamber to
form a mixture; and
o depositing of at least some of the evaporated aluminum oxide
and silicon from the evaporated silicon monoxide on the
substrate to form Al2O3 doped with silicon atoms on the
substrate, an amount of silicon within the silicon-doped
aluminum oxide being controlled by controlling the rate of the
evaporating silicon monoxide, the forming the mixture and the
depositing being conducted without flowing O2 into the chamber;
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