Ex Parte Mui et al - Page 2

                Appeal 2007-0706                                                                              
                Application 09/905,172                                                                        
                STATEMENT OF THE CASE                                                                         
                      The subject matter on appeal is directed to anti-reflection coatings and                
                hard masks for use in defining etch patterns within an underlying substrate                   
                structure.  (Specification 1).   Further details of the appealed subject matter               
                are recited in representative claim 8 reproduced below:                                       
                      8. A method of forming a multilayer antireflective hard mask                            
                structure, said method comprising:                                                            
                      providing a substrate structure;                                                        
                      depositing a CVD organic layer over said substrate structure by a                       
                plasma enhanced chemical vapor deposition process using a feed stream that                    
                comprises a hydrocarbon species, said CVD organic layer comprising                            
                carbon and hydrogen;                                                                          
                      depositing a dielectric layer over said CVD organic layer;                              
                      providing a patterned organic photoresist layer over said dielectric                    
                layer;                                                                                        
                      etching said dielectric layer through apertures in said patterned                       
                photoresist layer in a first plasma etching step until apertures are formed in                
                said dielectric layer; and                                                                    
                      etching said CVD organic layer through said apertures in said                           
                dielectric layer in a second plasma etching step until apertures are formed in                
                said CVD organic layer.                                                                       

                      As evidence of unpatentability of the claimed subject matter, the                       
                Examiner has relied upon the following prior art references:                                  
                Cheng   US 5,873,984   Feb. 23, 1999                                                          
                Chapman   US 5,976,769    Nov. 2, 1999                                                        
                Tsai     US 6,083,815    Jul. 4, 2000                                                         
                Huang   US 6,171,940 B1   Jan. 9, 2001                                                        
                Lou    US 6,200,881   Mar. 13, 2001                                                           

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