Appeal 2007-2304
Application 10/209,004
contact (figure 11A), and etching the electrode layer using a dry etch (col. 6, ll. 60-
64).
Hosaka, after etching the lower electrode of a nonvolatile memory or DRAM
using a dry etch, uses a wet etch to remove the surface roughness and distortions
on the lower electrode and to round the corner portions of the lower electrode’s
side surface, thereby preventing degradation of the quality of an insulating film
formed on the lower electrode and obtaining good electrical characteristics
(Hosaka 3, 5).
The Appellant argues that neither Sandhu nor Hosaka addresses the problem
of current leakage (Br. 9-10). Hosaka teaches that without the wet etch, corner
portions of conductor 3 will not disappear and, consequently, the quality of thin
insulating film 6 applied over the conductor degrades significantly (Hosaka 3).
Because the degradation of thin insulating film quality referred to by Hosaka and
the improper step coverage of dielectric (i.e., insulating) material referred to by the
Appellant both are caused by corners on the electrode to which the insulating
material is applied (Hosaka 3; Appellant’s Spec. 3:15-17), it appears that both
Hosaka and the Appellant are addressing the same problem – current leakage
where the insulating layer has a thin portion at the corner of an electrode. Both
Hosaka and the Appellant solve the problem the same way – using a wet etch to
round off the corners to provide better coverage of the insulating layer (Hosaka 3;
Appellant’s Spec. 22:18-23).
Regardless, contrary to the Appellant’s argument (Br. 10-11; Reply Br. 2),
the Appellant’s claims do not require forming a shaped electrode for the purpose of
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