Appeal No. 95-2861
Application 08/062,237
This is an appeal from the final rejection of claims 4
through 7. In an Amendment After Final (paper number 10), claim
4 was amended.
The disclosed invention relates to a non-volatile
semiconductor memory device.
Claim 4 is illustrative of the claimed invention, and it
reads as follows:
4. A non-volatile semiconductor memory device comprising:
a semiconductor substrate;
a source and a drain formed in said semiconductor substrate,
said source spaced from said drain;
a channel disposed between said source and said drain;
a pair of first control gates dielectrically disposed atop
portions of said channel;
a second control gate dielectrically disposed atop said pair
of first control gates and substantially perpendicular therewith;
and
a floating gate having end segments thereof dielectrically
disposed between said pair of first control gates and said second
control gate, and a mid segment thereof dielectrically disposed
atop another portion of said channel;
wherein when said first and second control gates are
substantially simultaneously energized to a first set of
potential values, electrical charges are couplingly induced in
said floating gate from said channel, allowing said floating gate
to couplingly vary the conductivity of said channel after the de-
energization of said control gate [sic, gates], and wherein when
said first and second control gates are substantially
simultaneously energized to a second set of potential values,
electrical charges are couplingly induced out of said floating
2
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