Appeal No. 95-1555
Application 07/871,530
a second liner of insulation material within the vertical
trench provided in said semiconductor substrate means and
disposed in inwardly spaced relationship with respect to said
first liner of insulation material;
first conductive material filling the portion of the
vertical trench within said second liner of insulation material;
second conductive material filling the space in said
vertical trench defined between said first and second liners of
insulation material;
said first and second conductive materials and said second
insulation liner defining a trench capacitor in which said first
and second conductive materials are capacitor plates and the
second liner of insulation material is a dielectric layer
therebetween;
a field-effect transistor provided in said semiconductor
substrate means and electrically connected to said trench
capacitor; and
said trench capacitor and said field-effect transistor
defining a memory, cell;
said semiconductor substrate means comprising:
a semiconductor substrate of the second conductivity type,
a buried semiconductor layer of the first conductivity type
disposed on said semiconductor substrate of the second
conductivity type, and
a second layer of semiconductor material of the first
conductivity type and of increased dopant concentration in
relation to said buried semiconductor layer of the first
conductivity type disposed on said buried semiconductor layer of
the first conductivity type and defining the top surface of said
semiconductor substrate means;
5
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: November 3, 2007