Appeal No. 96-1584
Application 08/066,697
voltage, said PN junction has a breakdown voltage which is
greater than the breakdown voltage of said PN junction when said
material capable of distributing a voltage applied thereto is
biased at the same bias voltage applied to said second
semiconductor region.
The references relied upon by the examiner as evidence of
anticipation and obviousness are:
Taylor 4,231,056 Oct. 28, 1980
Muramatsu 4,470,062 Sep. 4, 1984
Piotrowski 4,665,425 May 12, 1987
The appealed claims stand rejected as follows:
a) claims 4-6, 8, 9, 13-15, 17, 18 and 22-24 are rejected
under 35 U.S.C. § 103 as being unpatentable over Muramatsu in
view of Piotrowski.
b) claims 2, 3, 7, 11, 12, 16 and 21 are rejected under
35 U.S.C. § 103 as being unpatentable over Muramatsu and
Piotrowski, further in view of Taylor.
The final rejection (Paper No. 8) fails to treat claim 20.
In its appeal brief, appellant has inferred that claim 20 would
have been included in the group of claims identified above as b)
and rejected under 35 U.S.C. § 103 over Muramatsu, Piotrowski and
Taylor on pages 3 and 4 of the final rejection. For purposes of
this appeal, like appellant, we will treat claim 20 along with
claim 21, which depends from claim 20.
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