Appeal No. 94-4342
Application No. 07/765,771
Claim 10 is representative of the subject matter on
appeal and reads as follows:
10. A method for manufacturing a semiconductor device
for electrically isolating a first device and a second device
formed on a common semiconductor substrate of a first
conductivity type having a major surface, comprising the steps
of
forming a first conductor having a predetermined shape on
the major surface of said semiconductor substrate and
separated therefrom by a first insulating film, and forming a
second insulating film on said first conductor,
forming a third insulating film having a predetermined
vertical thickness on the major surface of said semiconductor
substrate so as to cover said first conductor and said second
insulating film,
removing said third insulating film by anisotropic
etching to expose the major surface of said semiconductor
substrate, to form on sidewalls of: said first insulating
film; said first conductor and said second insulating film, a
sidewall insulating film having a predetermined lateral
thickness corresponding to said predetermined vertical
thickness of said third insulating film,
thereafter, implanting impurities of a second
conductivity type opposite to said first conductivity type on
the exposed major surface of said semiconductor substrate
utilizing as masks said third insulating film said sidewall
insulating film, and
diffusing the implanted impurities to form a first
impurity region included in said first device and a second
impurity region included in said second device such that a
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Last modified: November 3, 2007