Appeal No. 96-2528
Application 08/011,202
GaAS material region as well as the AlGaAs regions.
Conventionally, in the art semiconductor materials are
described as being of “p” or “n” “type” of material. Without
expressing
that per se, it is believed that the artisan would have
understood two different types of these materials to have been
utilized to enable the localization discussed in Yamada.
Finally, as to claim 4, we are in agreement with the
examiner’s reasoning set forth in the answer. It is true that
neither Yamada nor Onda appears to specifically identify the
material utilized for the gate electrode in each reference.
The title and abstract of Abrokwah, in addition to the columns
6 and 7 portions identified by the examiner of this reference,
confirm that it was well known in the art that heterostructure
devices of the type set forth by Yamada and Onda would have
utilized an appropriate type of InGaAs as set forth in
dependent claim 4 on appeal.
In view of the foregoing, we have sustained each of the
rejections set forth by the examiner of claims 1-4 on appeal.
Therefore, the decision of the examiner is affirmed.
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