Appeal No. 97-3299
Application 08/481,900
final rejection of claims 26, 28-30, 32-37 and 39.
Representative claim 26 is reproduced below:
26. A method of forming a microelectronic device, said
device incorporating connecting structures between regions,
the method comprising:
a. providing a substrate having a first region;
b. forming a first insulating layer over said substrate;
c. removing selected portions of said first insulating
layer so as to at least partially expose said region, forming
a cavity above said exposed region;
d. forming a layer of semiconductor material on said
first insulating layer and said cavity so as to make contact
with said first region, said layer of semiconductor material
being formed with a thickness sufficient to partially fill
said cavity and to prevent dopants from subsequent doping
operations from penetrating to said first region;
e. forming a second insulating layer over said
semiconductor layer;
f. removing selected portions of said second insulating
layer so as to at least partially expose said semiconductor
layer; and
g. forming an interconnective layer over said second
insulating layer and in electrical communication with said
exposed semiconductor layer.
There are no references relied on by the examiner.
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