Appeal No. 95-3438
Application No. 08/033,656
out the process for depositing a silicon nitride film.
Indeed, according to appellants, these examples simply
demonstrate the expected normal variation in deposition rates
between runs using their method. Appellants contend that
slight differences in gas flow rates, the pressure of the
reactor, temperature of the wafer as well as other parameters
between successive runs adequately explain why the deposition
rates were not identical. Keeping in mind that the deposition
rate is reported in terms of angstroms
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