Appeal No. 96-1075
Application 08/041,737
transistors and integrated circuits." (Specification, pages 5-6).
The disclosed invention solves the problem in several
ways: (1) "by using a common substrate such as sapphire
. . . for the fabrication of both the superconductive and
the semiconductor sections of the monolithically integrated
structure, direct growth of an oxide superconductor atop a
semiconductor is avoided" (specification, page 10); (2) "the
use of a protective layer prevents contamination of the
semiconductor section during subsequent HTS processing"
(specification, pages 10-11); and (3) "[w]hen sapphire is
the substrate for both the HTS and the semiconductor parts
of the integrated circuits, Cu does not diffuse through the
substrate from the HTS devices into the semiconductor
structures" (specification, page 11), which reduces the
total area of the integrated circuit which must be
protected.
Claim 52 is reproduced below.
52. A monolithic integrated structure comprising:
an insulating substrate;
a semiconductor region formed on said substrate,
said semiconductor region comprising a semiconductor
material;
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